Dr Kham Niang

Dr Kham Niang joined the EPSRC Centre in September 2014 to work on the PHISTLES project. Kham is a Postdoctoral Research Associate in the Electronic Devices and Materials Group at the Electrical Engineering Division, University of Cambridge. Her research interests include the development of oxide based materials and thin film transistors suitable for large area electronics and the study of instability mechanisms in such devices. She has successfully developed Zinc-Tin Oxide TFTs using a scalable, plastic substrate compatible, high target utilisation sputtering (HiTUS) technology. She is also working on plasma enhanced chemical vapour deposition (PECVD) method to develop functional oxide materials using novel organometallic precursors.

Kham received her BEng (1st Class Honours) and PhD in Electronics Engineering from University of Southampton under the supervision of Professor Peter Ashburn. During her PhD, she investigated the behaviour of fluorine diffusion in silicon to suppress boron diffusion in CMOS and bipolar devices and successfully applied the results to production silicon bipolar technology in STMicroelectronics to achieve a world record cut-off frequency of 110 GHz. She has over 10 years of clean room process experience and fabrication of MOSFETs, DRAM and MEMS devices both in R&D and industry. In particular, she has done extensive work on the growth of doped Si, SiGe and SiGe:C epitaxial layers by low-pressure chemical vapour deposition (LPCVD).

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